Würth Electronics Launches WL-OCPT Dual-Channel Optocoupler Phototransistor

Würth Electronics further expands its WL-OCPT optocoupler product range with the addition of a DIP-8 package. Two-channel - eight-pin optocoupler photoresistors are now available. This design contains two circuits in one component, consisting of two...

Renesas unveils new DDR5 memory chips

On DDR5, Renesas has announced two new DDR5 DIMM chips for improving server and client performance in emerging applications. At present, under the constraints of the von Neumann architecture, DDR4 seems to have reached its limit. In order to solve th...

SiC-MOS intelligent power module

IPM29- SiC_MOS intelligent power module new product integrates a new generation of N-channel enhancement mode 1200V-SiC_MOSFET chip and optimized SOI process 6-channel gate driver chip. As a compact 1200V class package, this SiC MOSFET IPM is easy to...

Smaller, High-Power Harwin Connector Subfamily Benefits from 360° EMC Backshells

Harwin Corporation has announced that its Kona high-power connector sub-series is now available with backshells. Constructed from 6061 aerospace-grade aluminum alloy, this backshell prevents unwanted EMI leakage from the connector/cable assembly into...

What is the difference between MOS tube and IGBT tube?

Power switching devices play a vital role in modern electronic devices and power systems. As two common power switching devices, MOS tube (metal oxide semiconductor field effect transistor) and IGBT tube (insulated gate bipolar transistor), MOS tube ...