SiC-MOS intelligent power module

IPM29- SiC_MOS intelligent power module new product integrates a new generation of N-channel enhancement mode 1200V-SiC_MOSFET chip and optimized SOI process 6-channel gate driver chip. As a compact 1200V class package, this SiC MOSFET IPM is easy to use, Customize and optimize the drive part for SIC to effectively reduce switching oscillations. Furthermore, it offers excellent power density, reliability and performance in a compact package with good thermal performance and sufficient electrical isolation level capability thanks to the use of a DBC substrate with very high thermal conductivity. It is optimized for related applications and is a personalized product designed as a high-efficiency inverter platform for high-efficiency motor drives and active power correction circuits. Such as heating, ventilation and air conditioning, fan motors, vehicle air conditioning and three-phase power factor correction.

IPM29- SiC_MOS new series of production drivers integrate bootstrap circuit, integrated enable and adjustable fault output (FO), anti shoot-through interlock, under-voltage protection and temperature output functions, optimized high-voltage gate drive with integrated high-speed , Low-impedance SiC_MOSFETS inverter bridge, which greatly improves the EMI characteristics and switching loss of the product, and is suitable for motor drive applications with high-frequency switching requirements.

Features

• Integrated 1200V/20A high-voltage gate drive and supporting high-speed switch SiC_MOS inverter topology
• Optimize drive and SiC_MOS switch, reduce switching loss and optimize EMI characteristics
• Three-phase full-bridge inverter topology, lower bridge emitter open circuit, suitable for various motor drive scenarios
• Driver Integrated Bootstrap Diode with Current Limiting Resistor
• Built-in undervoltage protection, overcurrent protection, interlock, adjustable fault output and temperature output (VOT)
• Fully compatible with 3.3V and 5V drive input signals
• Insulation voltage level: 2500Vac

internal topology

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