STMicroelectronics releases two flexible and versatile power modules to simplify SiC inverter design

STMicroelectronics has announced two STPOWER power modules with built-in 1200V silicon carbide (SiC) MOSFETs in mainstream configurations. Both modules utilize ST's ACEPACK 2 packaging technology for high power density and easy installation.

The first module, A2F12M12W2-F1, is a four-group module that provides a convenient and compact full-bridge power conversion solution for circuits such as DC/DC converters.

The second module, A2U12M12W2-F2, features a three-level T-inverter topology with excellent on-state and switching energy efficiency and stable output voltage quality.

The MOSFETs in both modules are based on ST's second-generation SiC technology, with an excellent RDS(on) x chip area quality factor, ensuring that the switches can handle high currents and reduce power losses to a very low level. Typical on-resistance RDS(on) of each chip is 13mΩ. Both full-bridge and T-topology modules can be used to design high power applications, while low heat dissipation ensures excellent application efficiency and simple thermal management design.

The ACEPACK 2 package is compact in size and high in power density, featuring a high-efficiency aluminum oxide substrate and direct copper bonding (DBC) chip mount technology. External connections are crimp pins for easy installation in potentially harsh environments, such as electric vehicles (EVs) and charging stations, energy storage and solar power conversion scenarios. The package has an insulation withstand voltage of 2.5kVrms and a built-in NTC temperature sensor for system protection diagnostic functions.

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