Infineon further expands MOSFET device portfolio with advanced OptiMOS™ power MOSFETs

Small discrete power MOSFETs play a critical role in saving space, reducing costs and simplifying application design. In addition, higher power density enables flexible cabling and reduces the overall size of the system. Infineon Technologies AG has further expanded its portfolio of power MOSFETs in PQFN 2x2 mm2 packages with the introduction of the advanced new OptiMOS™ power MOSFETs, which are designed to provide the power semiconductor industry's benchmark solution for higher efficiency and better performance in a smaller package size.

The new products are suitable for a wide range of applications such as synchronous rectification in switch-mode power supplies (SMPS) in servers, communications, portable chargers and wireless chargers. In addition, the new products can be used in drones for applications such as electronic speed controllers for small brushless motors.

The new OptiMOS 6 40V power MOSFETs and OptiMOS 5 25V and 30V power MOSFETs further optimize the proven OptiMOS technology for high-performance designs. Available in an ultra-small PQFN 2x2 mm² package, the new devices feature advanced silicon technology, stable and reliable packaging, and extremely low thermal resistance (RthJC max. 3.2 K/W). These new devices feature the industry's lowest on-resistance and industry-leading performance metrics (FOMs, QG and QOSS) for outstanding dynamic switching performance. As a result, these MOSFETs with ultra-low switching losses and low on-state losses ensure excellent energy efficiency and power density while simplifying thermal management.

The OptiMOS power switches are available in a compact PQFN 2x2 mm2 package, which reduces system size and allows for smaller, more flexible end-user application geometries. By reducing the need for parallel connections, these MOSFET devices enhance the reliability of system designs and significantly reduce board space and system cost.

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