Six SuperGaN FET products that are pin-to-pin compatible with e-mode devices
Transphorm, Inc. (Nasdaq: TGAN) introduces six surface mount devices (SMDs) in industry standard PQFN 5x6 and 8x8 packages. These SMDs offer the reliability and performance advantages of Transphorm's patented SuperGaN® d-mode dual-switch normally-closed platform, in a package configuration commonly used for competing e-mode GaN devices. Therefore, these six devices can be easily used as a first design source in an e-mode GaN solution, or as a pin-to-pin compatible plug-in replacement and/or a second source.
For power systems requiring the additional thermal performance of the SuperGaN platform, Transphorm also offers SMDs in optimized Performance packages. Regardless of the package, all Transphorm devices are easy to design and drive because the d-mode configuration uses low-voltage Silicon MOSFETs paired with GaN HEMTs. This platform configuration also allows the use of standard off-the-shelf controllers and/or drivers, further enhancing the excellent actuation and designability of the Transphorm family of products.
"Transphorm continues to produce a robust portfolio of GaN devices covering the broadest power range available today," said Philip Zuk, Transphorm's Senior Vice President of Business Development and Marketing. "We are further strengthening our low power strategy with the introduction of these industry standard packages. Previously, we had just released a SiP package jointly developed with Weltrend Semiconductor. Now customers can choose how to take advantage of the advantages of SuperGaN, whether it is through a Performance package, a pin-to-pin e-mode compatible industry standard package, or a system-in-package. "
Advantages of SuperGaN plug-in replacement
Replacing e-mode devices with SuperGaN d-mode FETs has been proven to reduce conduction losses, provide higher performance and lower operating temperatures for longer lifetime reliability. This is due to fundamentally inherent advantages of d-mode GaN NC devices compared to e-mode GaN NC devices.
In the charger analysis, the SuperGaN FET can be operated within the output voltage range of the controller (while e-mode requires level shifting) and the temperature is lower. The temperature coefficient of resistance (TCR) of SuperGaN is about 25% lower than that of e-mode, which helps to reduce conduction loss. In addition, the number of external components has been reduced by 20%, indicating that the cost of raw materials is also lower.
Key features of these device shares include:
Conforms to JEDEC standard
Dynamic RDS(on)eff production test
Market leading robust design, wide gate safety margin, transient overvoltage capability
Very low reverse recovery charge
reduce crossover loss
target application
The 72 mΩ FET is optimized for datacom, broad industrial, photovoltaic inverters, servo motors, computing systems, and general consumer applications.
150, 240 and 480 mΩ FETs are optimized for power adapter, low power switching power supply, lighting and low power consumer applications.
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