Diodes' Silicon Carbide Schottky Barrier Diodes

Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) from Diodes. The product portfolio includes the DIODES DSCxxA065 series with eleven products rated at 650V (4A, 6A, 8A and 10A) and the DIODES DSCxx120 series with eight products rated at 1200V (2A, 5A and 10A).

Benefits of these wide bandgap SBDs include greatly improved efficiency and high temperature reliability, while responding to market demands for lower system implementation costs and reduced maintenance requirements. These devices are suitable for AC-DC, DC-DC, and DC-AC step-down converters, photovoltaic inverters, uninterruptible power supply systems, and industrial motor drive product applications. In addition, this series of devices is also suitable for various other circuits such as boost converters for power factor correction purposes.

The high efficiency performance of these SiC devices outperforms conventional silicon-based products, providing power supply designers with unprecedented product performance advantages such as:

• Low capacitive charge (QC) minimizes switching losses, increasing efficiency in high-speed switching applications. Ideal for circuit designs with high power density and small overall solution size.

• Low forward voltage (VF) further improves efficiency, reduces power loss and operating costs.

• Reduced heat dissipation helps reduce overall system thermal budget.

• High inrush current capability increases robustness for better system reliability, while excellent thermal performance reduces construction costs.

The devices in this series are available in three package options, including surface mount TO252-2 (WX type), through-hole TO220AC (WX type), and ITO220AC (WX-NC type).

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