SK hynix developed the industry's fastest server memory module MCR DIMM

SK Hynix announced today that it has successfully developed a sample of DDR5 Multiplexer Combined Ranks Dual-Inline Memory Module (MCR DIMM, Multiplexer Combined Ranks Dual-Inline Memory Module)*, which is currently the fastest server DRAM product in the industry. The minimum data transmission rate of this product is also as high as 8Gbps, which is more than 80% higher than the current DDR5 product 4.8Gbps

DDR (Double Data Rate) is a DRAM standard, mainly used in servers and clients, and has been developed to the fifth generation. MCR DIMM is a modular product that combines multiple DRAMs on a single motherboard, capable of running two memory ranks simultaneously.

Memory Rank (RANK): The basic unit for transferring data from a DRAM module to a CPU. A memory column can usually transmit 64 bytes (Byte) of data to the CPU.

This MCR DIMM product adopts a new method to increase the transmission speed of DDR5. While DDR5 is widely believed to operate at the speed of a single DRAM chip, SK Hynix engineers took a different approach when developing the product, increasing the speed of the module rather than the speed of a single DRAM chip.

SK hynix's technical team designed the product based on Intel MCR technology, using the data buffer (data buffer)* installed on the MCR DIMM to operate two memory ranks at the same time.

Buffer (Buffer): A component installed on the memory module to optimize the signal transmission performance between DRAM and CPU. Mainly installed in server modules that require high performance and reliability

Traditional DRAM modules can only transfer 64 bytes of data to the CPU at a time, while in an MCR DIMM module, two memory ranks can transfer 128 bytes of data to the CPU at the same time. The increase in the amount of data transferred to the CPU each time increases the data transfer speed to more than 8Gbps, twice that of a single DRAM.

The successful development of this product benefits from the cooperation with Intel and Renesas Electronics. The three companies worked closely together at all stages from development to speed and performance verification.

Yoo Sung-soo, vice president of DRAM product planning at SK hynix, believes that the successful development of this product depends on the combination of different technologies. Ryu Sung-soo said: "SK Hynix's DRAM module design capability is integrated with Intel's excellent Xeon processor and Renesas Electronics' buffer technology. To ensure the stable operation of MCR DIMM, the data buffer inside and outside the module and the processor can be smoothly Interaction is critical."

The data buffer is responsible for transmitting multiple signals from the middle modules, and the server CPU is responsible for receiving and processing the signals from the buffer.

Vice President Yoo also said, "Development of the industry's fastest MCR DIMM fully demonstrates another major advancement of SK hynix's DDR5 technology. We will continue to seek to break through technical barriers and consolidate our leadership in the server DRAM market."

Dr. Dimitrios Ziakas, Vice President of Intel Memory and IO Technology, said that Intel and SK Hynix are leading in the field of memory innovation, high performance for servers, and scalable DDR5, and there are other major industry partners in the same echelon.

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