AOS Introduces Innovative Double-Sided Thermal DFN 5x6 Package
AONA66916 Delivers Industry-Leading Thermal Performance for More Reliable Designs in New Top-Open DFN 5x6 Package
(AOS, NASDAQ: AOSL) Alpha and Omega Semiconductor Limited (AOS) (NASDAQ: AOSL), a leading supplier of power semiconductors and chips that integrates design, development, manufacturing and global sales, has announced the release of a 100V MOSFET, the AONA66916, in a new top-window DFN5x6 package that offers industry-leading heat dissipation for more reliable designs: AOSL) announced the AONA66916, a 100V MOSFET in AOS' innovative double-sided heat sink DFN 5 x 6 package. AOS products have long been recognized by customer system developers as an important component of their solution designs, enabling them to achieve a wide range of high-performance application requirements. Now, AOS products have further innovated to provide state-of-the-art packages to maintain optimal thermal performance of their devices, enabling engineers to develop more efficient solution designs in telecom systems and industrial applications that operate in harsh conditions for extended periods of time.
Typically, the standard DFN 5x6 package relies heavily on the bottom pad for heat dissipation, with most of the heat generated by the device being transferred to the PCB. To meet the system requirements, which makes PCB thermal management design more difficult, the AOS Dual Side Dissipation DFN 5x6 package achieves the highest possible heat transfer between the exposed top window and the heat sink due to its large surface contact area structure. This enables the device to achieve a low thermal resistance (Rthc-top max) of 0.5°C/W, which significantly improves thermal performance.The AONA66916's top-windowed DFN 5x6 package has the same package and dimensions (5mm x 6mm) as the AOS standard DFN 5x6, which eliminates the need to modify the existing PCB layout and improves the power density with a minimal evaluation effort.
Notably, the AONA66916 utilizes AOS 100V AlphaSGT™ technology, whose superior quality factor (FOM) is perfectly suited for hard-switching applications. The AONA66916 has a maximum RDS(on) of 3.4mOhms and supports a maximum junction temperature of 175°C. The AONA66916 is also available with a maximum junction temperature of 3.4mOhms.
"The thermal performance of MOSFETs is challenging in high-power power supply designs, and AOS has successfully addressed this fundamental issue with its advanced top-opening window package design. Due to the relatively large area of the top window, this not only achieves better heat transfer from the MOSFET from the top window to the heat sink. The lower temperature of the MOSFET also contributes to a more efficient and robust design solution," said Peter H. Wilson, senior marketing director for the AOS MOSFET product line.
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